| 000 | 00921nam a2200229 4500 | ||
|---|---|---|---|
| 003 | inmoiis | ||
| 008 | 220826b ||||| |||| 00| 0 eng d | ||
| 040 | _cIISER Mohali | ||
| 041 | _aEng. | ||
| 100 | _aNarkhede, Nikhil Pramod | ||
| 245 |
_aFabrication of Indium Based Ohmic Contacts to Gallium Arsenide that are Homogenous for Resist Processing / _cNikhil Pramod Narkhede and Dr. Ananth Venkatesan |
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| 260 |
_aIISER Mohali : _bDepartment of Physical Science, _cApril, 2022. |
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| 300 |
_aiv, 38 p. : _bill. ; _c28*20 cm. |
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| 500 | _aIncludes appendix and bibliographic references etc. | ||
| 502 |
_AMS17080 _aDr. Ananth Venkatesan _b2017 _c2022 _d2022 _eDepartment of Physical Science _fBSMS |
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| 610 | _aFabrication | ||
| 610 | _aHomogenous | ||
| 610 | _aGallium Arsenide | ||
| 700 | _aDr. Ananth Venkatesan (Supervisor) | ||
| 856 | _uhttp://210.212.36.82:8080/jspui/handle/123456789/4163 | ||
| 942 |
_2ddc _cMS |
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| 999 |
_c15238 _d15238 |
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