000			03610nam a22004815i 4500
001			978-3-540-39456-3
003			DE-He213
005			20190213151923.0
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008			121227s1983 gw | s |||| 0|eng d
020			_a9783540394563 _9978-3-540-39456-3
024	7		_a10.1007/3-540-11986-8 _2doi
050		4	_aQC173.45-173.458
072		7	_aPHF _2bicssc
072		7	_aSCI077000 _2bisacsh
082	0	4	_a530.41 _223
245	1	0	_aDefect Complexes in Semiconductor Structures _h[electronic resource] : _bProceedings of the International School Held in Mátrafüred, Hungary September 13–17, 1982 / _cedited by J. Giber, F. Beleznay, I. C. Szép, J. László.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c1983.
300			_aVI, 311 p. 81 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aLecture Notes in Physics, _x0075-8450 ; _v175
505	0		_aA technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds -- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III–V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon -- Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP.
650		0	_aPhysics.
650		0	_aCondensed matter.
650	1	4	_aPhysics.
650	2	4	_aCondensed Matter Physics.
700	1		_aGiber, J. _eeditor.
700	1		_aBeleznay, F. _eeditor.
700	1		_aSzép, I. C. _eeditor.
700	1		_aLászló, J. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783540119869
830		0	_aLecture Notes in Physics, _x0075-8450 ; _v175
856	4	0	_uhttp://dx.doi.org/10.1007/3-540-11986-8
912			_aZDB-2-PHA
912			_aZDB-2-LNP
912			_aZDB-2-BAE
999			_c12334 _d12334