000 03781nam a22005295i 4500
001 978-4-431-55800-2
003 DE-He213
005 20190213151823.0
007 cr nn 008mamaa
008 160330s2015 ja | s |||| 0|eng d
020 _a9784431558002
_9978-4-431-55800-2
024 7 _a10.1007/978-4-431-55800-2
_2doi
050 4 _aQC610.9-611.8
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008090
_2bisacsh
072 7 _aTJFD
_2thema
082 0 4 _a537.622
_223
245 1 0 _aDefects and Impurities in Silicon Materials
_h[electronic resource] :
_bAn Introduction to Atomic-Level Silicon Engineering /
_cedited by Yutaka Yoshida, Guido Langouche.
264 1 _aTokyo :
_bSpringer Japan :
_bImprint: Springer,
_c2015.
300 _aXV, 487 p. 292 illus., 180 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aLecture Notes in Physics,
_x0075-8450 ;
_v916
505 0 _aDiffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
520 _aThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
650 0 _aNanotechnology.
650 0 _aEngineering.
650 1 4 _aSemiconductors.
_0http://scigraph.springernature.com/things/product-market-codes/P25150
650 2 4 _aNanotechnology.
_0http://scigraph.springernature.com/things/product-market-codes/Z14000
650 2 4 _aMaterials Engineering.
_0http://scigraph.springernature.com/things/product-market-codes/T28000
650 2 4 _aNanotechnology and Microengineering.
_0http://scigraph.springernature.com/things/product-market-codes/T18000
650 2 4 _aSolid State Physics.
_0http://scigraph.springernature.com/things/product-market-codes/P25013
650 2 4 _aNanoscale Science and Technology.
_0http://scigraph.springernature.com/things/product-market-codes/P25140
700 1 _aYoshida, Yutaka.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
700 1 _aLangouche, Guido.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9784431557999
776 0 8 _iPrinted edition:
_z9784431558019
830 0 _aLecture Notes in Physics,
_x0075-8450 ;
_v916
856 4 0 _uhttps://doi.org/10.1007/978-4-431-55800-2
912 _aZDB-2-PHA
912 _aZDB-2-LNP
999 _c11996
_d11996