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New Developments in Semiconductor Physics [electronic resource] : Proceedings of the International Summer School Held in Szeged, Hungary July 1–6, 1979 / edited by Ferenc Beleznay, György Ferenczi, János Giber.

Contributor(s): Material type: TextTextSeries: Lecture Notes in Physics ; 122Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 1980Description: V, 283 p. 5 illus. online resourceContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783540392712
Subject(s): Additional physical formats: Printed edition:: No titleDDC classification:
  • 621.3815 23
LOC classification:
  • TK7867-7867.5
Online resources:
Contents:
Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors -- Optically detected magnetic resonance studies of semiconductors -- Deep level spectroscopy in semicounductors by optical excitation -- Depleted layer spectroscopy -- Luminescence of chromium in gallium arsenide -- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K -- Properties of an extended defect in GaAs.62P.38 -- Large defect-lattice relaxation phenomena in solids -- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In) -- Electron-phonon interaction: Polaron transport -- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb -- Photoluminescence in amorphous semiconductors -- Man-made semiconductor superlattices -- The localized states of interfaces and their physical models -- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids -- Is there a minimum linewidth in integrated circuits?.
In: Springer eBooks
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Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors -- Optically detected magnetic resonance studies of semiconductors -- Deep level spectroscopy in semicounductors by optical excitation -- Depleted layer spectroscopy -- Luminescence of chromium in gallium arsenide -- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K -- Properties of an extended defect in GaAs.62P.38 -- Large defect-lattice relaxation phenomena in solids -- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In) -- Electron-phonon interaction: Polaron transport -- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb -- Photoluminescence in amorphous semiconductors -- Man-made semiconductor superlattices -- The localized states of interfaces and their physical models -- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids -- Is there a minimum linewidth in integrated circuits?.

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