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Interaction of Gases with Surfaces [electronic resource] : Detailed Description of Elementary Processes and Kinetics / by Alexander V. Bogdanov, German V. Dubrovskiy, Michael P. Krutikov, Dmitry V. Kulginov, Victor M. Strelchenya.

By: Contributor(s): Material type: TextTextSeries: Lecture Notes in Physics Monographs ; 25Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 1995Description: XIV, 133 p. online resourceContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783540491071
Subject(s): Additional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification:
  • 539 23
LOC classification:
  • QC170-197
  • QC717.6-718.8
Online resources:
Contents:
Inelastic Scattering of Molecules from Crystal Surfaces -- General Semiclassical Theory of Gas—Surface Scattering -- Dynamic Structural Factors of Phonon Scattering -- Multiphonon Scattering -- Scattering from Rough Surfaces -- Concluding Remarks on Quasiclassical Approach to Gas-Surface Scattering -- Microscopic Models of Detailed Kinetics of Adsorption -- Microscopic Models of Detailed Kinetics -- Physical Models of Elementary Processes, Transition Probabilities, and Kinetic Coefficients -- Different Regimes of Adsorption Kinetics -- Equilibrium and Quasiequilibrium Solutions to the LG Model -- Thermodynamical Description of Adsorbed Layer Dynamics -- Phenomenological Models of Thin Film Growth at Solid Surfaces -- Classical Model of Nucleation and Nuclei Growth at Substrate -- Lateral Growth of Island Films -- Calculations of Thin Films Growth Kinetics -- Kinetic Boundary Condition (KBC) and Inverse Scattering Problem -- KBC for Distribution Function in Gas Phase -- Inverse Scattering Problem in Gas-Surface Interaction.
In: Springer eBooksSummary: Interface phenomena are most fascinating because of the mixing of different scales and the interference of diverse physical processes. This makes it necessary to use different levels of description: microscopic, kinetic, and gas-dynamical. A unified quasiclassical approach is used to answer practical questions dealing with inelastic gas-surface scattering, the kinetics of adsorption layers, the evolution of inhomogeneities and defects at the surface, the Knudsen layer, the development of boundary conditions on the kinetic and gas-dynamical levels, the determination of exchange and slip coefficients, and so on.
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Inelastic Scattering of Molecules from Crystal Surfaces -- General Semiclassical Theory of Gas—Surface Scattering -- Dynamic Structural Factors of Phonon Scattering -- Multiphonon Scattering -- Scattering from Rough Surfaces -- Concluding Remarks on Quasiclassical Approach to Gas-Surface Scattering -- Microscopic Models of Detailed Kinetics of Adsorption -- Microscopic Models of Detailed Kinetics -- Physical Models of Elementary Processes, Transition Probabilities, and Kinetic Coefficients -- Different Regimes of Adsorption Kinetics -- Equilibrium and Quasiequilibrium Solutions to the LG Model -- Thermodynamical Description of Adsorbed Layer Dynamics -- Phenomenological Models of Thin Film Growth at Solid Surfaces -- Classical Model of Nucleation and Nuclei Growth at Substrate -- Lateral Growth of Island Films -- Calculations of Thin Films Growth Kinetics -- Kinetic Boundary Condition (KBC) and Inverse Scattering Problem -- KBC for Distribution Function in Gas Phase -- Inverse Scattering Problem in Gas-Surface Interaction.

Interface phenomena are most fascinating because of the mixing of different scales and the interference of diverse physical processes. This makes it necessary to use different levels of description: microscopic, kinetic, and gas-dynamical. A unified quasiclassical approach is used to answer practical questions dealing with inelastic gas-surface scattering, the kinetics of adsorption layers, the evolution of inhomogeneities and defects at the surface, the Knudsen layer, the development of boundary conditions on the kinetic and gas-dynamical levels, the determination of exchange and slip coefficients, and so on.

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