Defects and Impurities in Silicon Materials (Record no. 11996)

MARC details
000 -LEADER
fixed length control field 03781nam a22005295i 4500
001 - CONTROL NUMBER
control field 978-4-431-55800-2
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20190213151823.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160330s2015 ja | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9784431558002
-- 978-4-431-55800-2
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-4-431-55800-2
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9-611.8
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD5
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008090
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD
Source thema
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
Edition number 23
245 10 - TITLE STATEMENT
Title Defects and Impurities in Silicon Materials
Medium [electronic resource] :
Remainder of title An Introduction to Atomic-Level Silicon Engineering /
Statement of responsibility, etc edited by Yutaka Yoshida, Guido Langouche.
264 #1 -
-- Tokyo :
-- Springer Japan :
-- Imprint: Springer,
-- 2015.
300 ## - PHYSICAL DESCRIPTION
Extent XV, 487 p. 292 illus., 180 illus. in color.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
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-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement Lecture Notes in Physics,
International Standard Serial Number 0075-8450 ;
Volume number/sequential designation 916
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
520 ## - SUMMARY, ETC.
Summary, etc This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
-- http://scigraph.springernature.com/things/product-market-codes/P25150
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
-- http://scigraph.springernature.com/things/product-market-codes/Z14000
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials Engineering.
-- http://scigraph.springernature.com/things/product-market-codes/T28000
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology and Microengineering.
-- http://scigraph.springernature.com/things/product-market-codes/T18000
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Solid State Physics.
-- http://scigraph.springernature.com/things/product-market-codes/P25013
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoscale Science and Technology.
-- http://scigraph.springernature.com/things/product-market-codes/P25140
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Yoshida, Yutaka.
Relator term editor.
Relator code edt
-- http://id.loc.gov/vocabulary/relators/edt
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Langouche, Guido.
Relator term editor.
Relator code edt
-- http://id.loc.gov/vocabulary/relators/edt
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9784431557999
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9784431558019
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Lecture Notes in Physics,
-- 0075-8450 ;
Volume number/sequential designation 916
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://doi.org/10.1007/978-4-431-55800-2
912 ## -
-- ZDB-2-PHA
912 ## -
-- ZDB-2-LNP

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